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NTGD4169F
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
21.4
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 85 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
0.5
0.9
1.5
V
Gate Threshold Temperature Coefficient
V GS(TH) /T J
? 3.4
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 4.5 V
V GS = 2.5 V
I D = 2.6 A
I D = 2.2 A
52
67
90
125
m W
Forward Transconductance
g FS
V DS = 15 V, I D = 2.6 A
2.6
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = 15 V
V GS = 4.5 V, V DS = 15 V,
I D = 2.0 A
295
48
27
3.7
0.6
0.9
0.8
5.5
pF
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(ON)
7.0
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 1.0 A, R G = 6.0 W
4.0
14
2.0
ns
DRAIN ? TO ? SOURCE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
IS = 0.9 A
T J = 25 ° C
0.7
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
t RR
T a
T b
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
IS = 0.9 A
8.0
5.0
3.0
3.0
ns
nC
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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